isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 1000(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers

文件：229.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 1000(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers

文件：134.87 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件：11.29 Kbytes 页数：1 Pages

SEME-LAB

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

文件：93.3 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司