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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
BDX85C	文件：53.7 Kbytes Page：1 Pages	Power Transistors DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6674,2N6675typesareNPNSiliconTripleDiffusedMesaPowerTransistorsdesignedforhighvoltageswitchingapplications. MARKING:FULLPARTNUMBER	CentralCentral Semiconductor Corp 美国中央半导体	Central
BDX85C	文件：231.91 Kbytes Page：2 Pages	isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
BDX85C	文件：135.59 Kbytes Page：2 Pages	Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=750(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=45V(Min)-BDX85;60V(Min)-BDX85A80V(Min)-BDX85B;100V(Min)-BDX85C •ComplementtoTypeBDX86/A/B/C APPLICATIONS •Designedforuseinpowerlinearandswitchingapplications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
BDX85C	文件：11.29 Kbytes Page：1 Pages	Bipolar NPN Device	SEME-LAB Seme LAB	SEME-LAB

更多BDX85C供应商更新时间2025-7-27 16:01:00