| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BDX33C | POWER TRANSISTORS(10A,70W) 10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS40-100VOLTS70WATTS | MOSPEC MOSPEC |  | |
BDX33C | NPN SILICON POWER DARLINGTONS NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith BDX34,BDX34A,BDX34B,BDX34CandBDX34D ●70Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | POINNPower Innovations Ltd Power Innovations Ltd |  | |
BDX33C | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheBDX33BandBDX33CaresiliconEpitaxial-BaseNPNpowertransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBDX34BandBDX34Crespectively. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
BDX33C | Power Linear and Switching Applications PowerLinearandSwitchingApplications •HighGainGeneralPurpose •PowerDarlingtonTR •ComplementtoBDX34/34A/34B/34Crespectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
BDX33C | NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNPPLASTICPOWERTRANSISTORS PowerDarlingtonforLinearSwitchilngApplication | TEL TRANSYS Electronics Limited |  | |
BDX33C | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Thesedevicesaredesignedforgeneralpurposeandlowspeedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(typ.)atIC=4.0 •Collector−EmitterSustainingVoltageat100mAdc VCEO(sus) =80Vdc(min)−BDX33B,BDX334B =100Vdc(min)−BDX33C,BDX334C | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
BDX33C | Silicon NPN Power Transistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON •ComplementtotypeBDX34/A/B/C APPLICATIONS •Forpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. |  | |
BDX33C | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS TheBDX33B,BDX33BandBDX33Caresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-220plasticpackage. Theyareintentedforuseinpowerlinearandswitchingapplications. Thecom | COMSET Comset Semiconductor |  | |
BDX33C | NPN Silicon Power Darlingtons Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •DesignedForComplementaryUsewithBDX34,BDX34A,BDX34B, BDX34CandBDX34D •70Wat25°CCassTemperature • | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
BDX33C | Silicon NPN Power Transistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON •ComplementtotypeBDX34/A/B/C APPLICATIONS •Forpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
BDX33C | Silicon NPN Power Transistors DESCRIPTION •WithTO-220Cpackage •HighDCcurrentgain •DARLINGTON •ComplementtotypeBDX34/A/B/C APPLICATIONS •Forpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. | | |
BDX33C | DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS DARLINGTONCOPLEMENTARYSILICONPOWERTRANSISTORS ..designedforgeneral-purposeamplifierandlowspeedswitchingapplication* FEATURES: *Collector-EmitterSustainingVoltage VCEO(sus)=45V(Min)-BDX33.BUX34 =60V(Min)-BDX33A.BDX34A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
BDX33C | Silicon NPN Darlington Power Transistor DARLINGTONCOPLEMENTARYSILICONPOWERTRANSISTORS ..designedforgeneral-purposeamplifierandlowspeedswitchingapplication* FEATURES: *Collector-EmitterSustainingVoltage VCEO(sus)=45V(Min)-BDX33.BUX34 =60V(Min)-BDX33A.BDX34A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDX33C | NPN/PNP PLASTIC POWER TRANSISTORS NPN/PNPPLASTICPOWERTRANSISTORS PowerDarlingtonforLinearSwitchilngApplication | CDIL CDIL |  | |
BDX33C | Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D | BournsBourns Inc. 伯恩斯（邦士） |  | |
BDX33C | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
BDX33C | NPN Silicon Power Darlingtons | MCCMicro Commercial Components 美微科美微科半导体公司 | | |
BDX33C | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | COMSET Comset Semiconductor | | |
BDX33C | Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
BDX33C | NPN SILICON POWER DARLINGTONS | BournsBourns Inc. 伯恩斯（邦士） | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl+Di
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
10A
- 最大工作频率：
>20MHZ
- 引脚数：
3
- 可代换的型号：
BD267B,BD649,BD701,BDT63B,BDT65B,BDW93C,YZ25D,
- 最大耗散功率：
70W
- 放大倍数：
β>750
- 图片代号：
B-10
- vtest：
100
- htest：
20000100
- atest：
10
- wtest：
70
产品属性
- 产品编号：
BDX33C
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
2.5V @ 6mA，3A
- 电流 - 集电极截止（最大值）：
500µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
750 @ 3A，3V
- 工作温度：
-65°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-220-3
- 供应商器件封装：
TO-220
- 描述：
TRANS NPN DARL 100V 10A TO220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
19+ |
TO-220-3 |
50 |
询价 | |||
ST(意法半导体) |
23+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST/意法 |
22+ |
TO-220-3 |
30000 |
原厂原装现货 |
询价 | ||
ST |
21+ |
TO-220 |
6850 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
STM |
21+ |
TO-220-3 |
2000 |
原装正品 有挂有货 |
询价 | ||
STM |
19+ |
2000 |
TO-220-3 |
询价 | |||
ST/意法 |
2022+ |
TO-220-3 |
339 |
原厂授权代理 价格绝对优势 |
询价 | ||
STMicroelectronics Asia Pacifi |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
STM |
23+ |
TO-220-3 |
3000 |
原装现货支持送检 |
询价 | ||
ST |
21+ |
TO-220AB |
6060 |
全新原装 支持BOM配单 |
询价 |
