Silicon PNP Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

文件：131.41 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

文件：102.21 Kbytes 页数：3 Pages

SAVANTIC

NPN SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

文件：134.84 Kbytes 页数：4 Pages

SIEMENS

西门子

PNP SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

文件：135.28 Kbytes 页数：4 Pages

SIEMENS

西门子

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

文件：55.2 Kbytes 页数：3 Pages

TEL

4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

文件：1.93878 Mbytes 页数：31 Pages

ROHM

罗姆