SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

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COMSET

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

文件：76.26 Kbytes 页数：3 Pages

COMSET

Silicon PNP Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

文件：131.41 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

文件：102.21 Kbytes 页数：3 Pages

SAVANTIC

NPN SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

文件：134.84 Kbytes 页数：4 Pages

SIEMENS

西门子

PNP SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

文件：135.28 Kbytes 页数：4 Pages

SIEMENS

西门子

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

文件：1.93878 Mbytes 页数：31 Pages

ROHM

罗姆

丝印：BD67870；Package：UQFN28AV040A；4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

文件：1.93878 Mbytes 页数：31 Pages

ROHM

罗姆

TriC3TM 4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Innovation Active Gate Drive (TriC3TM) Multi Level Gate Drive Current Control Real Time Gate Current Control Based on Information Sensed from the Output State Dead Time Adjustment Control ◼ 60 V Three-phase Brushless DC Motor Gate Driver Wide 4.5 V to 60 V Input Voltage Range

文件：2.75157 Mbytes 页数：49 Pages

ROHM

罗姆