Silicon NPN Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676/678/680 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

文件：132.42 Kbytes 页数：3 Pages

ISC

无锡固电

Plastic Medium-Power Silicon NPN Darlingtons

This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68

文件：99.98 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676/678/680 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

文件：103.56 Kbytes 页数：3 Pages

SAVANTIC

NPN SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

文件：134.84 Kbytes 页数：4 Pages

SIEMENS

西门子

PNP SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

文件：135.28 Kbytes 页数：4 Pages

SIEMENS

西门子

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

文件：130.63 Kbytes 页数：3 Pages

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