Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively

文件：39.45 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

文件：60.93 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682

文件：114.05 Kbytes 页数：3 Pages

COMSET

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications

文件：130.8 Kbytes 页数：3 Pages

ISC

无锡固电

Plastic Medium-Power Silicon NPN Darlingtons

This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68

文件：99.98 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications

文件：103.03 Kbytes 页数：3 Pages

SAVANTIC

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体