丝印：BD139；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD139；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD139A；Package：TO-126；NPN POWER TRANSISTORS

 FEATURES High current (max.1.5A) Low voltage (max.80V)

文件：199.89 Kbytes 页数：3 Pages

UTC

友顺

丝印：BD139A；Package：TO-126；NPN POWER TRANSISTORS

 FEATURES High current (max.1.5A) Low voltage (max.80V)

文件：199.89 Kbytes 页数：3 Pages

UTC

友顺

丝印：BD139；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD139；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD139A；Package：TO-126；NPN POWER TRANSISTORS

 FEATURES High current (max.1.5A) Low voltage (max.80V)

文件：199.89 Kbytes 页数：3 Pages

UTC

友顺

丝印：BD139A；Package：TO-126；NPN POWER TRANSISTORS

 FEATURES High current (max.1.5A) Low voltage (max.80V)

文件：199.89 Kbytes 页数：3 Pages

UTC

友顺

SILICON NPN EPITAXIAL TYPE

FEATURES: . Designed for Complementary Use with BD136, BD138 and BD140.

文件：214.66 Kbytes 页数：3 Pages

TOSHIBA

东芝

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

文件：100.81 Kbytes 页数：4 Pages

Motorola

摩托罗拉