丝印：BD137；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD137；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD137；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD137；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.45 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● High Current

文件：369.65 Kbytes 页数：4 Pages

FS

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ◾ High Current(1.5A) ◾ Low Voltage(80V)

文件：235.81 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

文件：1.11352 Mbytes 页数：4 Pages

JIANGSU

长电科技

High Current

TRANSISTOR (NPN) FEATURES • High Current(1.5A) • Low Voltage(80V)

文件：360.44 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

文件：1.10211 Mbytes 页数：4 Pages

JIANGSU

长电科技