丝印：BD136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

文件：1.28503 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

文件：1.28503 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

文件：1.28503 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

文件：1.28503 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

PNP General Purpose Transistor

FEATURES High Current

文件：194.48 Kbytes 页数：2 Pages

SY

顺烨电子

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

文件：315.28 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

文件：148.83 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

PNP Transistor TO-126

Feature: • PNP Plastic Power Transistors • Medium Power Linear and Switching Applications Description Transistor, PNP, TO-126

文件：226 Kbytes 页数：3 Pages

MULTICOMP

易络盟

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Current ● Complement To BD135, BD137 And BD139

文件：1.07635 Mbytes 页数：4 Pages

JIANGSU

长电科技

EPITAXIAL SILICON POWER TRANSISTORS

PNP EPITAXIAL SILICON POWER TRANSISTORS Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139

文件：180.8 Kbytes 页数：4 Pages

CDIL