SILICON EPITAXIAL POWER TRANSISTORS

SILICON EPITAXIAL POWER TRANSISTORS General Purpose Medium Power Applications

文件：147.68 Kbytes 页数：3 Pages

CDIL

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

文件：150.99 Kbytes 页数：3 Pages

MOSPEC

统懋

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

文件：108.73 Kbytes 页数：12 Pages

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

文件：87.15 Kbytes 页数：12 Pages

NEC

瑞萨