首页 >BCX55-16,135>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BCX55-16,135 | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-243AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1A SOT89 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
60V,1ANPNmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalandelectricalconductivity •LeadlessverysmallSMDplasticpackagewithmediumpowercapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V/60V/80V,1ANPNmediumpowertransistors Featuresandbenefits *HighcollectorcurrentcapabilityICand ICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V/60V/80V,1ANPNmediumpowertransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconAFTransistors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
NPNmediumpowertransistors DESCRIPTION NPNmediumpowertransistorinaSOT223plasticpackage.PNPcomplements:BCP51,BCP52andBCP53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Switching. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent) ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP51…BCP53(PNP) | SIEMENS Siemens Ltd | SIEMENS | ||
1A,60VNPNSiliconMediumPowerTransistor FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
NPNPlastic-EncapsulateTransistors | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
NPNSiliconAFTransistors NPNSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP51...BCP53(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconEpitaxialPlanarTransistor Features HighCollectorCurrent LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
NPNSiliconMediumPowerTransistor FEATURES •ForAFDriverandOutputStages •HighCollectorCurrent •LowCollector-EmitterSaturationVoltage | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1APNPmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors 1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEITA NPNcomplement BCX55BCX52 BCX55-10BCX52-10 BCX55-16 SOT89SC-62 BCX52-16 2.Featuresandbenef | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,1ANPNmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
产品属性
- 产品编号：
BCX55-16,135
- 制造商：
Nexperia USA Inc.
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 晶体管类型：
NPN
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
500mV @ 50mA，500mA
- 电流 - 集电极截止（最大值）：
100nA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
100 @ 150mA，2V
- 频率 - 跃迁：
180MHz
- 工作温度：
150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-243AA
- 供应商器件封装：
SOT-89
- 描述：
TRANS NPN 60V 1A SOT89
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
23+ |
SOT-89 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
NXP |
4000 |
询价 | |||||
SIRENZA |
23+ |
SMT-86 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NXP |
22+ |
SOP |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
NEXPERIA/安世 |
22+ |
SOT89 |
360000 |
进口原装房间现货实库实数 |
询价 | ||
Nexperia(安世) |
2112+ |
SOT-89 |
105000 |
4000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
NEXPERIA/安世 |
标准封装 |
58998 |
一级代理原装正品现货期货均可订购 |
询价 | |||
Nexperia |
21+ |
SOT-89 (SC-62) |
36000 |
正规渠道原装正品现货 |
询价 | ||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
NEXPERIA/安世 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 |
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