丝印：A3；Package：SOT89；80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.53 Kbytes 页数：12 Pages

NEXPERIA

安世

80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.42 Kbytes 页数：12 Pages

NEXPERIA

安世

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

文件：132.04 Kbytes 页数：7 Pages

DIODES

美台半导体

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

文件：132.04 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > 45V, 60V & 80V • Ic = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：146.44 Kbytes 页数：7 Pages

DIODES

美台半导体

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

文件：28.4 Kbytes 页数：1 Pages

ZETEX

General Purpose PNP Epitaxial Planar Transistor

Features • High breakdown voltage, BVCEO≥ -80V • Large continuous collector current capability • Low collector saturation voltage • Complementary to BCX56M3 • Pb-free lead plating and halogen-free package

文件：295.22 Kbytes 页数：6 Pages

CYSTEKEC

全宇昕科技

丝印：AH；Package：SOT89；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrica

文件：238.92 Kbytes 页数：12 Pages

NEXPERIA

安世

80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.42 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：A4；Package：SC-62；80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.53 Kbytes 页数：12 Pages

NEXPERIA

安世