PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

文件：132.04 Kbytes 页数：7 Pages

DIODES

美台半导体

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

文件：28.4 Kbytes 页数：1 Pages

ZETEX

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

文件：375.89 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：911D；Package：SOT-89；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

文件：375.89 Kbytes 页数：6 Pages

PANJIT

強茂

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：526.55 Kbytes 页数：8 Pages

INFINEON

英飞凌

General Purpose Transistor

General Purpose Transistor Features - Transistor PNP. - Low voltage. - High current.

文件：177.06 Kbytes 页数：6 Pages

COMCHIP

典琦

80V PNP MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：316.41 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AL；Package：SOT89；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrica

文件：238.92 Kbytes 页数：12 Pages

NEXPERIA

安世

80V PNP MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：316.41 Kbytes 页数：7 Pages

DIODES

美台半导体

80V PNP MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：316.41 Kbytes 页数：7 Pages

DIODES

美台半导体