丝印：AL；Package：SOT89；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrica

文件：238.92 Kbytes 页数：12 Pages

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80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.53 Kbytes 页数：12 Pages

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80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.42 Kbytes 页数：12 Pages

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Fast Recovery High Voltage Silicon Rectifiers

Fast Recovery High Voltage Silicon Rectifiers

文件：32.32 Kbytes 页数：2 Pages

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