NPN/PNP general-purpose transistor

文件：276.8 Kbytes 页数：11 Pages

PHI

PHI

EPITAXIAL PLANAR NPN TRANSISTOR

文件：311.15 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：311.15 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

NPN general purpose transistors

文件：220.45 Kbytes 页数：6 Pages

PHI

PHI

EPITAXIAL PLANAR NPN TRANSISTOR

文件：311.15 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

NPN general purpose transistors

文件：220.45 Kbytes 页数：6 Pages

PHI

PHI

铝电解电容器

BERYL

绿宝石

丝印：BCVA；Package：3LdSOT-23；300nA NanoPower Voltage References

300nA NanoPower Voltage References The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typical, 1.5µA maximum operating current. Additionally, the ISL21080 family features guaranteed initial accuracy as low as ±0.2 and 50ppm/°C temperature coefficient.

文件：1.22435 Mbytes 页数：21 Pages

RENESAS

瑞萨

PNP 达林顿晶体管

该器件设计用于要求极高电流增益（电流达800 mA）的应用。 采用工艺61设计。

ONSEMI

安森美半导体

NPN Darlington transistor

NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: BCV26 • Medium current of 500 mA\n• Low voltage of 30 V\n• High DC current gain of minimum 4000\n• AEC-Q101 qualified;

Nexperia

安世