丝印：BCT652；Package：SOIC；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Independent Registers and Enables for A and B Buses Multiplexed Real-Time and Stored Data Power-Up High-Impedance Mo

文件：232.25 Kbytes 页数：10 Pages

TI

德州仪器

丝印：BCT652；Package：SOIC；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Independent Registers and Enables for A and B Buses Multiplexed Real-Time and Stored Data Power-Up High-Impedance Mo

文件：232.25 Kbytes 页数：10 Pages

TI

德州仪器

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

文件：150.96 Kbytes 页数：6 Pages

POINN

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BD645, BD647, BD649 AND BD651 • 62.5 W at 25°C Case Temperture • 8 A Continuous Collector Current • Minimum hFE of 750 at 3 V, 3 A

文件：452.78 Kbytes 页数：5 Pages

TRSYS

Transys Electronics

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

文件：114.77 Kbytes 页数：5 Pages

Bourns

伯恩斯