PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

文件：114.77 Kbytes 页数：5 Pages

Bourns

伯恩斯

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647

文件：369.32 Kbytes 页数：5 Pages

COMSET

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

文件：150.96 Kbytes 页数：6 Pages

POINN

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications

文件：94.37 Kbytes 页数：3 Pages

SAVANTIC

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BD645, BD647, BD649 AND BD651 • 62.5 W at 25°C Case Temperture • 8 A Continuous Collector Current • Minimum hFE of 750 at 3 V, 3 A

文件：452.78 Kbytes 页数：5 Pages

TRSYS

Transys Electronics

Silicon NPN Power Transistors

文件：95.95 Kbytes 页数：3 Pages

SAVANTIC

SILICON DARLINGTON POWER TRANSISTORS

文件：111.79 Kbytes 页数：5 Pages

COMSET

isc Silicon PNP Darlington Power Transistor

文件：108.12 Kbytes 页数：2 Pages

ISC

无锡固电

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS● Designed for Complementary Use with BD645, BD647, BD649 and BD651\n● 62.5 W at 25°C Case Temperature\n● 8 A Continuous Collector Current\n● Minimum hFE of 750 at 3 V, 3 A

Bourns

伯恩斯

Trans Darlington PNP 120V 8A 3-Pin(3+Tab) TO-220

NJS