BCX55-16-Q

60V,1ANPNmediumpowertransistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEITA NPNcomplement BCX55-QBCX52-Q BCX55-10-QBCX52-10-Q BCX55-16-Q SOT89SC-62 BCX52-16-Q 2.Featur

BCX55-16T

60V,1ANPNpowerbipolartransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BCX55-16T

60V,1APNPpowerbipolartransistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BZX55-16

Voltageregulatordiodes

DESCRIPTION Low-powervoltageregulatordiodesinhermeticallysealedleadedglassSOD27(DO-35)packages. ThediodesareavailableinthenormalizedE24±5tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V(BZX55-C2V4toBZX55-C75). FEATURES •Tot

DCX55-16

NPNSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DCX52) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DLFP55-16F

RectifierDiodes&FRED

PMP55-16

40-55WATTSSINGLE&MULTIPLEOUTPUTAC/DCMEDICAL

Features •Inputsurgecurrentprotection. •Overvoltageprotection. •Overcurrentprotection. •Short-circuitprotectionwithautorecovery. •100burn-inatfullratedload.

PUP55-16

30-100WATTSSINGLE&MULTIPLEOUTPUTAC/DCGENERAL

TPBCP55-16

NPNSiliconEpitaxialPlanarTransistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage