PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78.

文件：46.03 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits

文件：44.95 Kbytes 页数：8 Pages

PHI

PHI

PNP Silicon AF Transistors

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54...BCP56 (NPN)

文件：48.02 Kbytes 页数：5 Pages

INFINEON

英飞凌

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56

文件：211.69 Kbytes 页数：4 Pages

CDIL

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：116.75 Kbytes 页数：7 Pages

DIODES

美台半导体

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：234.82 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

60 V, 1 A PNP medium power transistors

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：122.89 Kbytes 页数：12 Pages

恩XP

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN)

文件：1.13588 Mbytes 页数：4 Pages

JIANGSU

长电科技

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54...BCP56 (NPN)

文件：1.1244 Mbytes 页数：4 Pages

JIANGSU

长电科技

PNP Medium Power Transistors

■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56

文件：39.06 Kbytes 页数：2 Pages

KEXIN

科信电子