Plastic-Encapsulate MOSFETS

GENERAL DESCRIPTION DS(on) The BCL6602DW uses advanced trench technology to provide excellent R and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.

文件：360.11 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

P-channel and N-channel Complementary MOSFETS

文件：2.89085 Mbytes 页数：6 Pages

JIANGSU

长电科技

CPH6602

文件：44.91 Kbytes 页数：4 Pages

SANYO

三洋

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：272.05 Kbytes 页数：10 Pages

DIODES

美台半导体