首页 >BC858CD>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

BC858CDW1T1

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G

文件:106.29 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BC858CDW1T1

Dual General Purpose Transistors(PNP Duals)

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件:164.15 Kbytes 页数:5 Pages

LRC

乐山无线电

BC858CDW1T1

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件:469.23 Kbytes 页数:5 Pages

ETL

亚历电子

BC858CDW1T1G

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

文件:178.77 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BC858CDW

Dual General Purpose Transistors

文件:940.15 Kbytes 页数:6 Pages

YEASHIN

亚昕科技

BC858CDW1T1G

Dual General Purpose Transistors

文件:123.82 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

BC858CDW1T1G

Dual General Purpose Transistors

文件:88.63 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

BC858CDXV6

Dual General Purpose Transistor

文件:65.82 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BC858CDXV6T1

Dual General Purpose Transistor

文件:65.82 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

BC858CDXV6T5

Dual General Purpose Transistor

文件:65.82 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • 电流 - 集电极(Ic)(最大值):

    100mA

  • 电压 - 集射极击穿(最大值):

    30V

  • 不同 Ib,Ic 时的 Vce 饱和值(最大值):

    650mV @ 5mA,100mA

  • 电流 - 集电极截止(最大值):

    15nA(ICBO)

  • 不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值):

    420 @ 2mA,5V

  • 功率 - 最大值:

    380mW

  • 频率 - 跃迁:

    100MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    6-TSSOP,SC-88,SOT-363

  • 供应商器件封装:

    SC-88/SC70-6/SOT-363

供应商型号品牌批号封装库存备注价格
ON/ONSemiconductor/安森
24+
SOT-363SOT-323-6
33200
新进库存/原装
询价
ON
24+
原厂封装
270000
原装现货假一罚十
询价
ON
23+
SC70-6
450
专营高频管模块,全新原装!
询价
BROADCOM
25+
DIP
18000
原厂直接发货进口原装
询价
ON
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
ON/安森美
23+
SOT-363
24190
原装正品代理渠道价格优势
询价
ON/安森美
21+
SOT-363
30000
优势供应 实单必成 可13点增值税
询价
ON/安森美
23+
SOT-363
50000
全新原装正品现货,支持订货
询价
ON
25+
SOT363
3200
全新原装、诚信经营、公司现货销售
询价
ON
04+
SOT363
812
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多BC858CD供应商 更新时间2025-10-6 16:30:00