250mW, PNP Small Signal Transistor

文件：265.41 Kbytes 页数：4 Pages

TSC

台湾半导体

250mW, PNP Small Signal Transistor

文件：265.41 Kbytes 页数：4 Pages

TSC

台湾半导体

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

文件：164.3 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

文件：164.3 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

文件：28.16 Kbytes 页数：3 Pages

NTE