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BC847CDXV6T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT-563whichisdesignedforlowpowersurfacemountapplications. •Lead-FreeSolderPlating

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC847CDXV6T1

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC847CDXV6T1G

Dual General Purpose Transistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−563whichisdesignedforlowpowersurfacemountapplications. Features •ThesearePb−FreeDevices

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC847CDXV6T1_10

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC847CDXV6T1D

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC847CDXV6T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC847CDXV6T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC847CDXV6T1G_11

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SBC847CDXV6T1G

DualGeneralPurposeTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    BC847CDXV6T1

  • 功能描述:

    两极晶体管 - BJT 100mA 50V Dual NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON
24+
SOT563DPBF
6000
询价
ON
2016+
SOT-563
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ON
1735+
SOT563
6528
科恒伟业!只做原装正品!假一赔十!
询价
ON/安森美
18+
SOT563
35382
全新原装现货,可出样品,可开增值税发票
询价
三年内
1983
只做原装正品
询价
ON
24+
SOT-563
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ON
20+
SMD
11520
特价全新原装公司现货
询价
ON Semiconductor
2022+
4001
全新原装 货期两周
询价
ON/安森美
23+
NA
12730
原装正品代理渠道价格优势
询价
ON
17PB
SOT-563
1430
现货
询价
更多BC847CDXV6T1供应商 更新时间2025-5-2 16:30:00