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BC847BSH

45V,100mANPN/NPNgeneral-purposedoubletransistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847BSH-Q

45V,100mANPN/NPNgeneral-purposedoubletransistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C •QualifiedaccordingtoA

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847BSLASHDG

45V,100mANPNgeneral-purposetransistors

Generaldescription NPNgeneral-purposetransistorsinsmallplasticpackages. Features ■Lowcurrent ■Lowvoltage ■Threedifferentgainselections Applications ■General-purposeswitchingandamplification

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC847BSQ

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>45V •Ultra-SmallSurfaceMountPackage •IdeallySuitedforAutomatedInsertion •ForswitchingandAFAmplifierApplication •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •TheBC847BSQissuitableforautomoti

DIODES

Diodes Incorporated

BC847BS-Q

45V,100mANPN/NPNgeneral-purposetransistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847BS-TP

DualNPNSmallSignalTransistor300mW

Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ●IdeallySuitedforAutomaticInsertion ●Ultra-SmallSurfaceMountPackage ●ForSwitchingandAFAmplifierApplications ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivi

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

BC847BT

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC847BT

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>45V •IC=100mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

DIODES

Diodes Incorporated

BC847BT

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinanSC-75plasticpackage. PNPcomplements:BC856TandBC857T. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification,especially inportablecommunicationequipment •Electronicdataproce

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BC847BT

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon p/bLead(Pb)-Free

WEITRON

Weitron Technology

详细参数

  • 型号:

    BC847BRTC

  • 功能描述:

    两极晶体管 - BJT -

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
NA
2018+
NA
6528
承若只做进口原装正品假一赔十!
询价
NA
22+
NA
40540
原装正品现货
询价
原装KEC
19+
SOT-23
20000
原装现货假一罚十
询价
KEC
24+
SOT-23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
原装KEC
24+
SOT-23
63200
一级代理/放心采购
询价
二极管
22+
20000
保证原装正品,假一陪十
询价
KEC
21+
SOT-23
120000
长期代理优势供应
询价
二极管
21+
原厂封装
3115
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
NA
1922+
NA
8900
公司库存原装低价格欢迎实单议价
询价
KEC
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
更多BC847BRTC供应商 更新时间2025-5-12 19:12:00