丝印：1F；Package：TSSOP6；45 V, 100 mA NPN/NPN general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • Qualified according to AEC-Q101 and recommended for use in automotive

文件：241.81 Kbytes 页数：11 Pages

NEXPERIA

安世

45 V, 100 mA NPN/NPN general-purpose transistor

NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BC857BS-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

文件：80.39 Kbytes 页数：10 Pages

PHI

PHI

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

文件：51.75 Kbytes 页数：8 Pages

PHI

PHI

RF POWER TRANSISTOR NPN SILICON

文件：101.01 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉