首页 >BC808R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPSiliconAFTransistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation225mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandr | Diotec Diotec Semiconductor | Diotec | ||
PNPSiliconEpitaxialPlanarTransistors PNPSiliconEpitaxialPlanarTransistors forgeneralpurposeandswitchingapplications Thesetransistorsaresubdividedintothreegroups–16,-25,-40accordingtotheircurrentgain. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
PlasticHighPowerSiliconPNPTransistor PlasticHighPowerSiliconPNPTransistor ...designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=30(Min)@IC=2.0Adc •BD808,810arecomplementarywithBD807,890 | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
iscSiliconPNPPowerTransistor DESCRIPTION •DCCurrentGain-:hFE=30@IC=-2A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min) •ComplementtoTypeBD807 APPLICATIONS •Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PlasticHighPowerSiliconPNPTransistor PlasticHighPowerSiliconPNPTransistor ...designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=30(Min)@IC=2.0Adc •BD808,810arecomplementarywithBD807,890 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconPNPPowerTransistor DESCRIPTION •DCCurrentGain-:hFE=30@lc=-2A •Collector-EmitterSustainingVoltage-:VCEo(sus)=-60V(Min) •ComplementtoTypeBD807 APPLICATIONS •Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
2.4GHzRFtransceiver •Wireless(Tier-1RFPerformance) –2.4GHzRFtransceiver –Wi-Fi802.11b/g/n –Bluetooth®5.xDual-mode(BT+BLE) –Zigbee/IEEE802.15.4 –Wi-Fi/Bluetooth/ZigbeeCoexistence –Integratedbalun,PA/LNA –SupportExternalPA/LNA •Microcontroller –Multi-CoreRISC-VCPUs(MaxFreq480M | BOUFFALOALBBouffalo Lab Intelligent Technology Co., Ltd. 博流智能博流智能科技（南京）有限公司 | BOUFFALOALB | ||
SILICONBRIDGERECTIFIERS PRV:50-1000Volts Io:8.0Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Idealforprintedcircuitboard *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
SILICONBRIDGERECTIFIERS | HY HY ELECTRONIC CORP. | HY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
