NPN EPITAXIAL SILICON TRANSISTOR

Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808

文件：31.84 Kbytes 页数：2 Pages

Fairchild

仙童半导体

NPN Silicon AF Transistors

● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807, BC808 (PNP)

文件：47.67 Kbytes 页数：5 Pages

Infineon

英飞凌

NPN Silicon Transistor (High current application Switching application)

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC808

文件：80.78 Kbytes 页数：3 Pages

AUK

SILICON PLANAR EPITAXIAL TRANSISTORS

SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors

文件：204.04 Kbytes 页数：3 Pages

CDIL

SURFACE MOUNT SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.

文件：337.81 Kbytes 页数：2 Pages

Central

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：188.12 Kbytes 页数：2 Pages

Diotec

德欧泰克

NPN General Purpose Amplifier

FEATURES ● For general AF application. ● Complementary PNP type available BC808. ● High collector current, high current gain. ● Low collector-emitter saturation voltage. APPLICATIONS ● General purpose medium power amplifier.

文件：191.31 Kbytes 页数：4 Pages

BILIN

银河微电

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in drive and output stages of audio amplifiers.

文件：229.95 Kbytes 页数：1 Pages

DCCOM

道全

Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16, -25 and -40 according to their current gain. ♦ As com

文件：227.3 Kbytes 页数：5 Pages

GE

TRANSISTOR (NPN)

FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage

文件：361.75 Kbytes 页数：2 Pages

HTSEMI

金誉半导体