丝印：5B1；Package：SOT-323；General Purpose Transistors

General Purpose Transistors PNP Silicon FEATURE ● Collector current capability IC = -500 mA. ● Collector-emitter voltage VCEO(max) = -45 V. ● General purpose switching and amplification. ● NPN complement: BC817U Series. ● We declare that the material of product compliance with RoHS requirem

文件：278.78 Kbytes 页数：3 Pages

FS

TRANSISTOR:Genreal Purpuse

First Silicon

POWER TRANSISTORS(8.0A,150-200V,60W)

文件：110.55 Kbytes 页数：3 Pages

MOSPEC

统懋

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨