首页 >BC651(D,E)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNSILICONPOWERDARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | POINN Power Innovations Ltd | POINN | ||
NPNSILICONPOWERDARLINGTONS | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
NPNSILICONPOWERDARLINGTONS NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •HighDCCurrentGain:hFE=750(Min)@IC=3A •LowSaturationVoltage •ComplementtoTypeBD652 APPLICATIONS •DesignedforuseascomplementaryAFpush-pulloutputstageapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SILICONDARLINGTONPOWERTRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647 | COMSET Comset Semiconductor | COMSET | ||
SILICONDARLINGTONPOWERTRANSISTORS | COMSET Comset Semiconductor | COMSET | ||
NPNSILICONPOWERDARLINGTONS NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
SiliconNPNDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •HighDCCurrentGain:hFE=750(Min)@lc=3A •LowSaturationVoltage •ComplementtoTypeBD652 APPLICATIONS •DesignedforuseascomplementaryAFpush-pulloutputstageapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconNPNDarlingtonPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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