首页 >BC51-10PASX>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BC51-10PASX | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：3-UDFN 裸露焊盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 1A DFN2020D-3 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
45V,1APNPmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V/60V/80V,1APNPmediumpowertransistors Generaldescription PNPmediumpowertransistorseriesencapsulatedinanultrathinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapabilityandvisibleandsolderablesidepads. Featuresandbenefits ■HighcollectorcurrentcapabilityIC | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V,1APNPmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •ReducedPrinted-CircuitBoard(PCB)arearequirements •Exposedheatsinkforexcellentthermalandelectricalconductivity •Twocurrentgainselections •LeadlessverysmallSMDplasticpackagewithmediumpowercapabili | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V,1APNPmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
PNPSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
PNPSiliconAFTransistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PNPPlastic-EncapsulateTransistors Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
45V,1APNPmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V,1ANPNmediumpowertransistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
45V,1APNPmediumpowertransistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
PNPPlastic-EncapsulateTransistors | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
PNPMediumpowertransistors FEATURES ●ForAFdriverandoutputstages. ●Highcollectorcurrent. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCX54/BCX55/BCX56. APPLICATIONS ●Mediumpowergeneralpurposes. ●Driverstagesofaudioamplifiers. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
PNPSiliconAFTransistors | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●NPNComplementstoBCX54,BCX55,BCX56 ●LowVoltage ●HighCurrent APPLICATIONS ●MediumPowerGeneralPurposes ●DriverStagesofAudioAmplifiers | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
Plastic-EncapsulateTransistors FEATURES •IC=-1AContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | HOTTECH | ||
TRANSISTOR(PNP) | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
TRANSISTOR(PNP) | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
PNPSiliconAFTransistors PNPSiliconAFTransistors •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCX54...BCX56(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PNPSiliconAFTransistors Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX54…BCX56(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS |
产品属性
- 产品编号：
BC51-10PASX
- 制造商：
Nexperia USA Inc.
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 晶体管类型：
PNP
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
500mV @ 50mA，500mA
- 电流 - 集电极截止（最大值）：
100nA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
63 @ 150mA，2V
- 频率 - 跃迁：
145MHz
- 工作温度：
150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
3-UDFN 裸露焊盘
- 供应商器件封装：
DFN2020D-3
- 描述：
TRANS PNP 45V 1A DFN2020D-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
23+ |
DFN-3(2x2) |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
Nexperia/安世 |
22+ |
SOT1061D |
120000 |
原厂原装正品现货 |
询价 | ||
TI/德州仪器 |
23+ |
MSOP8 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
NEXPERIA/安世 |
22+ |
SOT1061D |
360000 |
进口原装房间现货实库实数 |
询价 | ||
Nexperia(安世) |
2112+ |
DFN2020D-3 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
NEXPERIA |
1809+ |
DFN-3 |
6675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
NXP/恩智浦 |
标准封装 |
57218 |
一级代理原装正品现货期货均可订购 |
询价 | |||
Nexperia USA Inc. |
21+ |
DO-247 |
21000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
NEXPERIA |
21+ |
SOT1061D |
6000 |
原装正品 |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT1061 |
6000 |
原装正品假一罚百!可开增票! |
询价 |
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