丝印：BS；Package：HUSON3；60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.74331 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.98381 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.

文件：1.12186 Mbytes 页数：22 Pages

恩XP

60 V, 1 A PNP medium power transistors

文件：1.12186 Mbytes 页数：22 Pages

恩XP

丝印：BS；Package：SOT1061；60 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal an

文件：249.87 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C7；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C7；Package：DFN2020D-3；60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.35 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 1 A PNP medium power transistor

PNP medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. NPN complement: BC55PA. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Leadless very small SMD plastic package with medium power capability\n• AEC-Q101 qualified;

Nexperia

安世

45 V/60 V/80 V, 1 A PNP medium power transistors

PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.\nTable 1. Product overview Type number[1]\n Package\n NPN complement\n BC5 • High collector current capability IC and ICM\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified\n• Two current gain selections\n• Leadless very small SMD plastic package with medium power capability\;

Nexperia

安世

60 V, 1 A PNP medium power transistors

PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.

Nexperia

安世