丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：754.42 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：2310；Package：SOT-23；N-Channel MOSFET

DESCRIPTION The BC2310 uses advanced trench technology to provid e excellent R . low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. DS(ON) FEATURE  High power and current handing capabi

文件：686.53 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications

文件：600.09 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

N-Channel Enhancement Mode MOSFET

Features and Benefits • Low On-Resistance • High Dense Design • Reliable and Rugged Applications: • Battery management • Portable appliances • Relay driver • High-speed line driver • Low-side load switch • Switching circuits • AEC-Q101 Qualified for Automotive Application

文件：470.15 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

场效应晶体管

CBI

创基电子

场效应管

Bluecolour

蓝彩电子