Build in Biasing Circuit MOS FET IC UHF RF Amplifier

• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions

文件：111.98 Kbytes 页数：9 Pages

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions

文件：111.98 Kbytes 页数：9 Pages

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瑞萨

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. • Provide

文件：187.96 Kbytes 页数：9 Pages

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. • Provide

文件：187.96 Kbytes 页数：9 Pages

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丝印：orange；Package：DO-35；Silicon Variable Capacitance Diodes

文件：48.48 Kbytes 页数：3 Pages

SIEMENS

西门子

丝印：orange；Package：DO-35；Silicon Variable Capacitance Diodes

文件：48.48 Kbytes 页数：3 Pages

SIEMENS

西门子

Transistors>Amplifiers/MOSFETs

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