Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. • Provide

文件：187.96 Kbytes 页数：9 Pages

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. • Provide

文件：187.96 Kbytes 页数：9 Pages

RENESAS

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Transistors>Amplifiers/MOSFETs

Renesas

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HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

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N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting

文件：88.77 Kbytes 页数：9 Pages

NEC

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