Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. • Provide

文件：187.96 Kbytes 页数：9 Pages

RENESAS

瑞萨

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.5 dB typ. at f = 900 MHz • High gain; PG = 24 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions. • Provide

文件：187.96 Kbytes 页数：9 Pages

RENESAS

瑞萨

Transistors>Amplifiers/MOSFETs

Renesas

瑞萨

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

文件：45.83 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=10kΩ)

文件：35.58 Kbytes 页数：4 Pages

SIEMENS

西门子

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：114.66 Kbytes 页数：4 Pages

Infineon

英飞凌