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型号	下载订购	功能描述	制造商上传企业	LOGO
SMAJ30A	文件：217.72 Kbytes Page：12 Pages	丝印：BB5；Package：SMA；400 W Transient Voltage Suppressor 1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W • Reverse standoff 文件：217.72 Kbytes 页数：12 Pages	NEXPERIA 安世	NEXPERIA
BB501	文件：71.04 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：71.04 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB501	文件：71 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：71 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB501C	文件：71 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：71 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB501C	文件：198.46 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：198.46 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
BB501CAS-TL-E	文件：198.46 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：198.46 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
BB501M	文件：300.86 Kbytes Page：11 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：300.86 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
BB501M	文件：71.04 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：71.04 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB501MAS-TL-E	文件：300.86 Kbytes Page：11 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：300.86 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
BB502	文件：64.93 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.6 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. 文件：64.93 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

产品属性

产品编号：
SMAJ30A
制造商：
Bourns Inc.
类别：
电路保护 > TVS - 二极管
系列：
SMAJ
包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
类型：
齐纳
电压 - 反向断态（典型值）：
30V
电压 - 击穿（最小值）：
33.3V
不同 Ipp 时电压 - 箝位（最大值）：
48.4V
电流 - 峰值脉冲 (10/1000µs)：
8.3A
功率 - 峰值脉冲：
400W
电源线路保护：
无
应用：
通用
工作温度：
-55°C ~ 150°C（TJ）
安装类型：
表面贴装型
封装/外壳：
DO-214AC，SMA
供应商器件封装：
DO-214AC（SMA）
描述：
TVS DIODE 30VWM 48.4VC SMA

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	SMAJ30A	TWGMC臺灣迪嘉	25+	SMA	36000	TWGMC臺灣迪嘉原装现货SMAJ30A即刻询购立享优惠#长期有排单订	询价
深圳冠荣电子有限公司	SMAJ30A	SUNMATE(森美特)	2019+ROHS	DO-214AC(SMA)	66688	森美特高品质产品原装正品免费送样	询价
深圳市河锋鑫科技有限公司	SMAJ30A	BRIGHTKING/君耀	2019+PB	SMADO-214AC	45000	原装正品可含税交易	询价
深圳市创新迹电子有限公司	SMAJ30A	LITTELFUSE/力特	2021+	SMA	9000	原装现货,随时欢迎询价	询价
深圳市讯顺达科技有限公司	SMAJ30A	Slkor/萨科微	24+	SMA	50000	Slkor/萨科微一级代理,价格优势	询价
深圳市得捷芯城科技有限公司	SMAJ30A	Littelfuse(力特)	24+	N/A	18040	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市瑞卓芯科技有限公司	SMAJ30A	VISHAYMAS	14+	DO-41	100000		询价
深圳市粤科源兴科技有限公司	SMAJ30A	CCD	13+	DO-214	6238	原装分销	询价
深圳市一线半导体有限公司	SMAJ30A	GSI	24+		315816		询价
深圳市星佑电子有限公司	SMAJ30A	LITTELFU	08+	DO-214AC	98000	绝对全新原装强调只做全新原装现	询价

更多BB5供应商更新时间2025-12-16 17:16:00

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