丝印：BB4；Package：SMA；400 W Transient Voltage Suppressor

1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W • Reverse standoff

文件：217.72 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：green；Package：DO-35；Silicon Variable Capacitance Diode

文件：60.27 Kbytes 页数：3 Pages

SIEMENS

西门子

Single Row Terminal Blocks Continued

Terminal Blocks - Single Row Cover Options - Single Row

文件：105.83 Kbytes 页数：1 Pages

COOPER

Solderless Plug-in BreadBoard with 400 tie-points and 4 power rails.

Features: • 400 total tie points - a 300 tie-point IC circuit area and two 50 tie-point distribution strips providing four power rails. • ABS plastic body with black printed legend and color legend on distribution strips. • Phosphor bronze contacts with plated nickel finish rated for 50,000 in

文件：1.05466 Mbytes 页数：3 Pages

BUSBOARD

A 400 tie-point Solderless BreadBoard, 10cm ZipWire™ Cables, 3AA Battery Box and a green LED with resistor

• 400 tie points total: 300 tie-point IC-circuit area plus two 50 tie-point distribution strips providing 4 power rails. • Smooth machined male pins designed for breadboard use provides 4.5 Volt power from 3 AA cells (not included). •28AWG ribbon cable can be unzipped to remove individual wire

文件：520.78 Kbytes 页数：2 Pages

BUSBOARD

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-

文件：64.87 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-

文件：74.89 Kbytes 页数：14 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-

文件：74.89 Kbytes 页数：14 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build

文件：67.17 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

文件：337.56 Kbytes 页数：3 Pages

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