Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-

文件：64.87 Kbytes 页数：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC VHF RF Amplifier

HITACHI

日立

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

文件：45.83 Kbytes 页数：2 Pages

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Light Emitting Diode (LED) Driver IC Provides Constant LED Current Independent of Supply Voltage Variation

文件：197.59 Kbytes 页数：8 Pages

INFINEON

英飞凌

Light Emitting Diode (LED) Driver IC Provides Constant LED Current Independent of Supply Voltage Variation

文件：197.59 Kbytes 页数：8 Pages

INFINEON

英飞凌