Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-

文件：74.89 Kbytes 页数：14 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-

文件：74.89 Kbytes 页数：14 Pages

HitachiHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

HITACHI

日立

BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs

FEATURES • Input π Filter • Fully Regulated Outputs • Industry Standard Pinouts • 5, 12, 24, 28, and 48 VDC Inputs • Ripple and Noise Less Than 50mVpp • Input/Output Isolation

文件：45.83 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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40 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators

文件：1.28805 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

40 Ampere Standard Type Positive Block Rectifier Diodes for Automotive Alternators

文件：1.28805 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体