Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-

文件：74.89 Kbytes 页数：14 Pages

HITACHIHitachi Semiconductor

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Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

HITACHI

日立

NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

文件：106.97 Kbytes 页数：12 Pages

PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

文件：66.76 Kbytes 页数：7 Pages

PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

文件：58.54 Kbytes 页数：7 Pages

PHI

PHI