Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build

文件：67.17 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

文件：337.56 Kbytes 页数：3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

文件：337.56 Kbytes 页数：3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

文件：337.56 Kbytes 页数：3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build

文件：67.17 Kbytes 页数：11 Pages

HitachiHitachi Semiconductor

日立日立公司