SCHOTTKY DIODE

FEATURES ● Low Forward Voltage ● Fast Switching

文件：364.78 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

丝印：63*；Package：SOT-323；Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 very small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Low forward voltage • Guard ring protected • Very small SMD package • Low diode capacitance. APPLICATIONS • U

文件：52.5 Kbytes 页数：8 Pages

PHI

飞利浦

SURFACE MOUNT SCHOTTKY DIODES

FEATURES • Fast switching speed • Surface mount package ideally suited for automatic insertion Electrical identical standard JEDEC • High conductor • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

文件：56.08 Kbytes 页数：3 Pages

PANJIT

強茂

丝印：63*；Package：SOT-323；General-purpose Schottky diodes

General description General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed ■ Low leakage current ■ High breakdown voltage ■ Low capacitance Applications ■ Ultra high-speed switching ■ Voltage clamping

文件：227.24 Kbytes 页数：21 Pages

恩XP

Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

Silicon Schottky Diode ●General-purpose diodes for high-speed switching ●Circuit protection ●Voltage clamping ●High-level detecting and mixing

文件：141.07 Kbytes 页数：4 Pages

SIEMENS

西门子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low forward voltage • Fast switching

文件：193.88 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

Surface Mount Schottky Barrier Diodes

FEATURES • Low Turn-on Voltage • Low Forward Voltage • Very Low Capacitance Less Than 5.0pF @ 0V • For high speed switching application, circuit protection

文件：241.06 Kbytes 页数：2 Pages

SECOS

喜可士

Sub-miniature Schottky Diodes & Arrays in

Key Features 1. Industry-standard Schottky diode devices in array configurations. 2. 30 Volt, 40 Volt and 70 Volt Vrrm. 3. Popular configurations: ❐ Triple Schottky, Isolated ❐ 4 Schottkys arrayed as two common cathode circuits ❐ 4 Schottkys arrayed as two common anode circuits

文件：83.17 Kbytes 页数：4 Pages

DIODES

美台半导体

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Single and Dual Diode Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：98.94 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

SCHOTTKY DIODE

SCHOTTKY DIODE FEATURES Power dissipation PD:200 mW (Tamb=25℃) Collector current IF:200 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：65.76 Kbytes 页数：1 Pages

TEL

东电电子