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BAS40

Schottky barrier double diodes

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BAS40

Surface Mount Schottky Barrier Diodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD   Protection Applications   Fastswitchesinthickandthinfilmcircuits

VishayVishay Siliconix

威世科技

Vishay

BAS40

HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

SIEMENS

Siemens Ltd

SIEMENS

BAS40

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

SIEMENS

Siemens Ltd

SIEMENS

BAS40

Schottky Diodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.

GE

GE Industrial Company

GE

BAS40

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

DIODESDiodes Incorporated

达尔科技

DIODES

BAS40

SCHOTTKY array??SERIES

DESCRIPTION VariousconfigurationsofSchottkybarriersdiodesinSOT-23packagesareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalterminationsattheboardlevel.Thishelpsmaintainsignalintegrityandcounteract

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

BAS40

Surface mount Schottky-Barrier Single-/ Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

DiotecDIOTEC

德欧泰克

Diotec

BAS40

HiRel Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BAS40

Surface Mount Schottky Diode

Voltage:40VoltsPower:200mW Features LowTurn-onVoltage LowForwardVoltage-0.5V(Max)@IF=30mA VeryLowCapacitance-LessThan5.0pF@1V Forhighspeedswitchingapplication,circuitprotection

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

BAS40

Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BAS40

Surface Mount Schottky Barrier Diode

Features LowTurn-onVoltage LowForwardVoltage-0.5V(Max)@IF=30mA VeryLowCapacitance-LessThan5.0pF@1V Forhighspeedswitchingapplication,circuitprotection

DAESAN

Daesan Electronics Corp.

DAESAN

BAS40

SCHOTTKY DIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

BAS40

SURFACE MOUNT SCHOTTKY DIODES

SURFACEMOUNTSCHOTTKYDIODES VOLTAGE40VoltsCURRENT0.2Ampers FEATURES •Fastswitchingspeed •Surfacemountpackageideallysuitedforautomatic insertionElectricalidenticalstandardJEDEC •Highconductor •Pbfreeproduct:99Snabovecanmeet RoHSenvironmentsubstanc

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

BAS40

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ●LowTurn-onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESDProtection ●DesignedforSurfaceMountApplication ●PlasticMaterial–ULRecognitionFlammabilityClassification94V-O

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE

BAS40

Surface mount schottky barrier diode

Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

BAS40

Surface Mount Schottky Barrier Diodes

FEATURES •LowTurn-onVoltage •LowForwardVoltage •VeryLowCapacitanceLessThan5.0pF@0V •Forhighspeedswitchingapplication,circuitprotection

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

BAS40

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE-40VoltsCURRENT-0.2Ampere FEATURES *Forgeneralpurposeapplications *Lowforwardvoltagedrop. *Fastswitchingtime. *ProtectedbyaPNjunctionguardringagainstexcessive voltage,suchaselectrostaticdischarge(ESD).

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

BAS40

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •Lowforwardvoltage •Fastswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

BAS40

General-purpose Schottky diodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

产品属性

  • 产品编号:

    BAS40

  • 制造商:

    Yangzhou Yangjie Electronic Technology Co.,Ltd

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    200mA

  • 速度:

    小信号 =< 200mA(Io),任意速度

  • 不同 Vr、F 时电容:

    5pF @ 0V,1MHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23

  • 工作温度 - 结:

    125°C(最大)

  • 描述:

    DIODE SCHOTTKY 40V 200MA SOT23

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
21+
SOT-23
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
YANGJIE(扬杰)
22+
SOT-23(TO-236)
3000
原装现货、公平又符合市场标准
询价
NXP(恩智浦)
23+
标准封装
79048
全新原装正品/价格优惠/质量保障
询价
2015+
10
公司现货库存
询价
NXP
18+
SOT23
980000
一级代理/全新原装现货/长期供应!
询价
NXP/恩智浦
21+
SOT-23
15000
全新原装现货,假一赔十
询价
NXP/恩智浦
2105+
SOT-23
10053
询价
NXP/恩智浦
22+
SOT-23
2769
绝对原装!公司现货!
询价
Infineon/英飞凌
22+
SOT23
163000
一级代理商现货保证进口原装正品假一罚十价格合理
询价
NXP(恩智浦)
22+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多BAS40供应商 更新时间2024-4-28 17:58:00