1PS70SB40

Marking：63；Package：SC-70；General-purpose Schottky diode

1.Generaldescription General-purposeSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •AEC-Q101qualified 3.Applications •Ultrahigh-spe

BAS40W

Marking：63；Package：SC-70；General-purpose Schottky diode

1.Generaldescription General-purposeSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •AEC-Q101qualified 3.Applications •Ultrahigh-spe

BAT63

Marking：63；Package：SOT-143；Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

SiliconSchottkyDiode ●LowbarrierdiodeformixeranddetectorsuptoGHzfrequencies

BZX84-A8V2

Marking：63；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

DTC143Y

Marking：63；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

NUP4201MR6

Marking：63；Package：SOT-26；Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection

NUP4201MR6

Marking：63；Package：SOT-26；Transient Voltage Suppressors

1SMA4763A

Marking：63A；1.0W SURFACE MOUNT ZENER DIODE

GlassPassivatedDieConstruction 1.0WPowerDissipation 3.3V–330VNominalZenerVoltage 5%StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

1SMA4764A

Marking：63A；Package：DO-214AC；SURFACE MOUNT SILICON ZENER DIODES

Vz:3.0-300Volts,Pd:1Watts Features ●Glasspassivatedchip ●Lowleakage ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lead(Pb)-freecomponent ●Foruseinstabilizingandclipping withhighpowerrating MechanicalData ●Case:Moldedpla

630

Marking：630；Package：TO-220C；9A 200V N-channel Enhancement Mode Power MOSFET

1Description TheseN-channelEnhancedVDMOSFETs,isobtainedby theself-alignedplanartechnologywhichreducethe conductionloss,improveswitchingperformanceand enhancetheavalancheenergy.Whichaccordswiththe RoHSstandard. 2Features ●FastSwitching ●LowONResistance(Rdso