丝印：63；Package：SC-70；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra high-spe

文件：188.34 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：63；Package：SC-70；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra high-spe

文件：189.3 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：63；Package：SOT-143；Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies

文件：114.2 Kbytes 页数：3 Pages

SIEMENS

西门子

丝印：63；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：63；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：63；Package：SOT-26；Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection

文件：41.48 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：63；Package：SOT-26；Transient Voltage Suppressors

文件：179.9 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：630；Package：TO-220C；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

文件：1.35377 Mbytes 页数：11 Pages

WXDH

东海半导体

丝印：630A；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The 630AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：994.61 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：63*；Package：SOT-323；Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 very small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Low forward voltage • Guard ring protected • Very small SMD package • Low diode capacitance. APPLICATIONS • U

文件：52.5 Kbytes 页数：8 Pages

PHI

飞利浦