丝印：63；Package：SC-70；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra high-spe

文件：188.34 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：63；Package：SC-70；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra high-spe

文件：189.3 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：63；Package：SOT-143；Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies

文件：114.2 Kbytes 页数：3 Pages

SIEMENS

西门子

丝印：63；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：63；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：63；36V Input VD with Detector and Release Delay Function for Automotive Applications

FEATURES • Operating Voltage Range (Maximum Rating) ·················· R8315NxxxA/B: 1.4V to36.0V (50.0V) R8315NxxxE/F: 3.6V to6.0V (7.0V) • Operating Temperature Range ···································· 40ºC to 125ºC • Supply Current ······················································

文件：1.21082 Mbytes 页数：31 Pages

NISSHINBO

日清纺微电子

丝印：63；150mA Low Supply Current LDO REGULATOR

FEATURES • Supply Current Typ. 1.0μA (Except the current through CE pull down circuit) • Standby Current Typ. 0.1μA • Dropout Voltage

文件：1.26978 Mbytes 页数：36 Pages

NISSHINBO

日清纺微电子

丝印：63；Package：SOT-26；Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection

文件：41.48 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：63；Package：SOT-26；Transient Voltage Suppressors

文件：179.9 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：630；Package：TO-220C；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

文件：1.35377 Mbytes 页数：11 Pages

WXDH

东海半导体