型号：1PS70SB40；Package：SC-70；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra high-spe

文件：188.34 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BAS40W；Package：SC-70；General-purpose Schottky diode

1. General description General-purpose Schottky diode in a small SOT323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra high-spe

文件：189.3 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BAT63；Package：SOT-143；Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies

文件：114.2 Kbytes 页数：3 Pages

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

型号：BZX84-A8V2；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：DTC143Y；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHMRohm

罗姆罗姆半导体集团

型号：NUP4201MR6；Package：SOT-26；Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection

文件：41.48 Kbytes 页数：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

型号：NUP4201MR6；Package：SOT-26；Transient Voltage Suppressors

文件：179.9 Kbytes 页数：9 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

型号：1SMA4763A；1.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：105.93 Kbytes 页数：5 Pages

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

型号：1SMA4764A；Package：DO-214AC；SURFACE MOUNT SILICON ZENER DIODES

Vz : 3.0 - 300 Volts, Pd : 1 Watts Features ● Glass passivated chip ● Low leakage ● Built-in strain relief ● Low inductance ● High peak reverse power dissipation ● Lead (Pb)-free component ● For use in stabilizing and clipping with high power rating Mechanical Data ● Case: Molded pla

文件：271.25 Kbytes 页数：4 Pages

FS

First Silicon Co., Ltd

型号：630；Package：TO-220C；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

文件：1.35377 Mbytes 页数：11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司