High Voltage Switching Diode

High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS Features • Pb−Free Packages are Available

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ONSEMI

安森美半导体

High Voltage Switching Diode

Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：110.37 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High Voltage Switching Diode

Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：75.93 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High Voltage Switching Diode

The BAS21M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for high voltage switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features

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ONSEMI

安森美半导体

FAST SWITCHING DIODE VOLTAGE RANGE 250 Volts CURRENT 200 mAmpere

VOLTAGE RANGE 250 Volts CURRENT 200 mAmpere FEATURE * Small surface mounting type. (FBPT-923) * High speed. (TRR=30nSec Typ.) * Suitable for high packing density. APPLICATION * Ultra high speed switching

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CHENMKO

力勤

丝印：JS；Package：SOT23；High-voltage switching diode

1. General description High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • Reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 5 pF • Small SMD plastic

文件：203.75 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SURFACE MOUNT FAST SWITCHING DIODE

SOT23 SILICON HIGH SPEED SWITCHING DIODE

文件：90.21 Kbytes 页数：4 Pages

DIODES

美台半导体

SURFACE MOUNT FAST SWITCHING DIODE

SOT23 SILICON HIGH SPEED SWITCHING DIODE

文件：90.21 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：X001；Package：DFN1010D-3；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 n

文件：218.62 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 n

文件：218.62 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司