丝印：AN；Package：SC-90；Single high-speed switching diode

1.1 General description Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications n High switching speed: trr £ 50 ns n Low capacitance: Cd £ 2 pF n Low leakage current n Reverse v

文件：551.99 Kbytes 页数：10 Pages

NEXPERIA

安世

HIGH VOLTAGE SWITCHING DIODE

Features o Repetitive peak forward current « High switching speed « Continuous reverse voltage o Repetitive peak reverse voltage

文件：1.44686 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：4P.；Package：SOD-323；SMD Switching Diodes

Features - Small surface mounting type. - High speed switching.

文件：466.17 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：AN；Package：SC-90；Single high-speed switching diode

1. General description High-speed switching diode, encapsulated in a SOD323F (SC-90) very small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low capacitance: Cd ≤2 pF • Low leakage current • Reverse voltage: VR

文件：184.11 Kbytes 页数：8 Pages

NEXPERIA

安世

High Voltage Switching Diode

Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：110.37 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

GENERAL PURPOSE DIODES

DESCRIPTION The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed. FEATURES * High Current Capability * High Switching Speed

文件：136.01 Kbytes 页数：3 Pages

UTC

友顺

丝印：0110；Package：DFN1006D-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100

文件：213.7 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：0110；Package：DFN1006D-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100

文件：225.11 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：J3；Package：DFN1006-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V •

文件：202.38 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：M9；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

文件：229.01 Kbytes 页数：10 Pages

NEXPERIA

安世