High Voltage Switching Diode

Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：110.37 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High Voltage Switching Diode

文件：110.32 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

GENERAL PURPOSE DIODES

DESCRIPTION The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed. FEATURES * High Current Capability * High Switching Speed

文件：136.01 Kbytes 页数：3 Pages

UTC

友顺

丝印：0110；Package：DFN1006D-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100

文件：213.7 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0110；Package：DFN1006D-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100

文件：225.11 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：J3；Package：DFN1006-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V •

文件：202.38 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M9；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

文件：229.01 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M9；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage

文件：229.16 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

High Voltage Switching Diode

High Voltage Switching Diode

文件：37.4 Kbytes 页数：2 Pages

LRC

乐山无线电

CASE 318 08, STYLE 8 SOT 23 (TO 236AB)

High Voltage Switching Diode

文件：66.7 Kbytes 页数：4 Pages

Motorola

摩托罗拉