丝印：J3；Package：DFN1006-2；High-voltage switching diode

1. General description High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V •

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

High-voltage switching diode

High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. • High switching speed: trr ≤ 50 ns\n• High reverse voltage VR≤ 200V\n• Ultra small SMD plastic package\n• AEC-Q101 qualified;

Nexperia

安世

High-voltage switching diode

High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

Nexperia

安世

Package：2-XDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GP REV POL 200V 330MA 2DFN

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司