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BAS116LP3-7

ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE

Features •Ultra-SmallLeadlessSurfaceMountPackage(0.6x0.3mm) •Ultra-LowProfilePackage(0.3mm) •VeryLowLeakageCurrent •LowCapacitance •IdealforCompactBatteryPoweredPortableElectronics •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimo

DIODESDiodes Incorporated

美台半导体

BAS116LPH4

SURFACE MOUNT SWITCHING DIODE

Features •FastSwitchingSpeed •Ultra-SmallLeadlessSurfaceMountPackage(1.0*0.6mm) •Ultra-LowProfilePackage(0.4mm) •LowForwardVoltage •FastReverseRecovery •LowCapacitance •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

BAS116LPH4-7B

SURFACE MOUNT SWITCHING DIODE

Features •FastSwitchingSpeed •Ultra-SmallLeadlessSurfaceMountPackage(1.0*0.6mm) •Ultra-LowProfilePackage(0.4mm) •LowForwardVoltage •FastReverseRecovery •LowCapacitance •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

美台半导体

BAS116LS

Marking:9C;Package:DFN1006BD-2;Low-leakage diode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116LS-Q

Marking:9C;Package:DFN1006BD-2;Low-leakage diode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116LT1

Switching Diode

Thisswitchingdiodehasthefollowingfeatures: •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1toorderthe7inch/3,000unitreel UseBAS116LT3toorderthe13inch/10,000unitreel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LT1

Switching Diode

Thisswitchingdiodehasthefollowingfeatures: •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1toorderthe7inch/3,000unitreel UseBAS116LT3toorderthe13inch/10,000unitreel

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

BAS116LT1

Switching Diode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116LT1

SURFACE MOUNT SWITCHING DIODE

SURFACEMOUNTSWITCHINGDIODE •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

BAS116LT1D

Switching Diode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

产品属性

  • 产品编号:

    BAS116

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    215mA

  • 速度:

    标准恢复 >500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    2pF @ 0V,1MHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23-3

  • 工作温度 - 结:

    -65°C ~ 150°C

  • 描述:

    DIODE GEN PURP 85V 215MA SOT23-3

供应商型号品牌批号封装库存备注价格
Nexperia(安世)
/
SOT-23
6666
原装
询价
INFINEON原装正品专卖
23+
SOT-23
680000
专注原装正品现货特价中量大可定
询价
恩XP
2019+
SOT23
36000
原盒原包装 可BOM配套
询价
INFINEON/英飞凌
20+
SOT-23
120000
原装正品 可含税交易
询价
PANJIT/强茂
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
DIODES/美台
24+
SOT523
800
原装正品,假一罚十!
询价
恩XP
24+
SOT-23
8570
新进库存/原装
询价
恩XP
2020+
SOT-23
18000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
恩XP
2015+
SOT-23
28989
一级代理原装现货,特价热卖!
询价
PHI
24+
原厂封装
9000
原装现货假一罚十
询价
更多BAS116供应商 更新时间2025-5-7 10:58:00